Schottky diode
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网络 肖特基二极管; 萧特基二极体; 萧特基二极管; 萧基特二极管; 肖特基二極體
双语例句
- A new ultra-wideband ( UWB) Gaussian pulse generator composed of a step recovery diode ( SRD), a field-effect transistor ( FET) and a Schottky diode was developed.
设计了一种超宽带高斯脉冲的脉冲发生器，此脉冲发生器主要由阶跃恢复二极管，FET管和肖特基二极管组成。 - The influence of InAs quantum dots on the transport properties of Schottky diode
InAs量子点在肖特基势垒二极管输运特性中的影响 - The GaN nanowires have been applied to fabricate the Schottky diode.
GaN纳米线已经在肖特基二极管的研制中得到应用。 - The manufacturing process and electrical parameters of p-type 6H-SiC schottky diode are studied in the paper.
研究了p型Al/6H-SiC肖特基二极管的基本制作工艺及其电学参数。 - Silicon carbide based Schottky diode gas sensors are widely used for applications such as emission measurements and leak detections.
SiC肖特基二极管气体传感器可以广泛应用于检测气体排放物和气体泄露。 - Schottky Diode Applications in mm-Wave Integrated Circuits
肖特基势垒二级管在毫米波集成电路中的应用 - Microwave nW power sensor uses low barrier schottky diode ( LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管（LBSD）作为检测微波信号功率元件的微波毫微瓦功率传感器。 - In this paper, a new method of complete calibration of six port measurement system is presented which uses the low barrier Schottky diode detectors for power detection.
本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。 - The microwave characteristics of the low-barrier Schottky diode detector is studied in this paper.
对低势垒肖特基二极管检波器进行了微波特性分析，给出了小信号情况下的检波特性。 - In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.
本文介绍了几种新型复合二极管，包括变容二极管、开关二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。 - Admittance of a Schottky Diode and Its Application in Measuring Energy Levels
肖特基二极管导纳的研究及其在能级测量中的应用 - Theoretical Analysis and Development of the Schottky Diode Detector Used in Microwave Power Sensor
肖特基二极管检波器用于微波功率探头的理论分析与研制 - The system which utilizing a Gunn diode emitter and unbiased Schottky diode detector was compact, simple and portable.
该系统采用耿氏二极管作发射器，无偏置肖特基二极管作探测器，具有小型、简单和便携的特点。 - The Associativity between Current voltage Characteristics and Conductance Voltage drop of the Schottky Diode
肖特基二极管伏安特性与导通压降相关性研究 - A New Method of Calculating Electrical Parameters of Amorphous Silicon Schottky Diode
计算非晶硅肖特基二极管电学参数的新方法 - The fabrication technics of Al/ C_ ( 60)/ Cu Schottky diode was studied.
探索出制作Al/C（60）/Cu肖特基二极管的工艺流程。 - Analysis on response properties of MISiC schottky diode gas sensors
MISiC肖特基二极管式气体传感器响应特性分析 - High Performance of Si-based Schottky Diode Hydrogen Sensor
高性能Si基MOS肖特基二极管式氢气传感器研究 - Effect of Interfacial Layer Doped with Opposite Type Impurities on Schottky Diode
界面异型掺杂层对肖特基二极管的影响 - The sensitive mechanisms of gas sensors with a structure of metal insulator silicon carbide ( MISiC) Schottky diode are analyzed. A physical model for the device is developed by combining thermal electron emission theory with tunnel theory.
分析了金属绝缘体SiC（MISiC）结构肖特基二极管（SBD）气体传感器敏感机理，通过将热电子发射理论与隧道理论结合，建立了器件物理模型。 - Optical Frequency Measurement with Schottky Diode
用肖特基二极管进行光频测量 - Current transport properties of GaAs Schottky diode containing InAs self-assembled quantum dots
InAs自组装量子点GaAs肖特基二极管中的电流输运特性 - Square law detector was discussed, equivalent model of tiny signal has also been analyzed. Sensitivity of schottky diode was discussed.
平方律检波部分重点分析了其小信号等效模型，分析肖特基二极管的灵敏度。 - Combined advantages of PIN diode and schottky diode, the Merged PIN/ Schockey ( MPS) diode having more fast and more "soft" reverse recovery characteristics, can satisfy the requirement of modern power electronic technology.
综合了PIN二极管和肖特基二极管优点的PIN/肖特基混合二极管&MPS（MergedPIN/Schockey）二极管具有更快、更软的反向恢复特性，能满足现代电力电子技术的要求。 - In this situation, Synchronous rectification ( SR) should be adopted. It adopts power MOSFET instead of traditional schottky diode and common diode to rectify.
在此情况下，必须采用同步整流（Synchronousrectification，SR）技术，即采用功率MOSFET代替传统的肖特基二极管和普通二极管进行整流。 - The device features an internal synchronous rectifier for high efficiency; it requires no external Schottky diode.
该器件的特点是在内部集成有同步整流管，因而可以在不需要额外肖特基二极管的情况下取得较高的效率。 - In the traditional secondary rectification circuit, Schottky diode is applied.
在以往的副边整流电路中，采用的是肖特基二极管。 - The study found that the spontaneous formation of the Schottky diode is due to the asymmetric contact formation between the single ZnO nanowires and the two metal electrodes, these diodes of the transport properties depend greatly on the nanowire dimensions.
研究发现这些自发形成的肖特基二极管是由于单根ZnO纳米线与两个金属电极的非对称接触形成的，这些二极管的输运性质很大程度上依赖于纳米线的尺寸。